Due to the small thermal neutron absorption cross section of 11B isotope. high abundance 11BF3 is regarded as an important ion implanted gas and P-type doping source. and is mainly used in semiconductor material manufacturing process to significantly improve the anti-radiation interference ability of semiconductor devices. In order to achieve the optimal design of the high-abundance 1... https://ashleyshomestores.shop/product-category/raf-corner-chaise/